Semiconductor device and monolithic semiconductor device including a power semiconductor device and a control circuit
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United States of America Patent
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Jul 9, 2019
Grant Date -
Jan 18, 2018
app pub date -
Jul 7, 2017
filing date -
Jul 18, 2016
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Abstract
A monolithic semiconductor device has a substrate with a power region and control region. The substrate can be a silicon-on-insulator substrate. An opening is formed in the power region and extends partially through the substrate. A semiconductor material is formed within the opening. A power semiconductor device, such as a vertical power transistor, is formed within the semiconductor material. A control logic circuit is formed in the control region. A first isolation trench is formed in the power region to isolate the power semiconductor device and control logic circuit. A second isolation trench is formed in the control region to isolate a first control logic circuit from a second control logic circuit. An interconnect structure is formed over the power region and control region to provide electrical interconnect between the control logic circuit and power semiconductor device. A termination trench is formed in the power region.
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