Selective tungsten growth for word lines of a three-dimensional memory device
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United States of America Patent
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Aug 13, 2019
Grant Date -
Jan 18, 2018
app pub date -
Oct 24, 2016
filing date -
Jul 13, 2016
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Abstract
Void formation in tungsten lines in a three-dimensional memory device can be prevented by providing polycrystalline aluminum oxide liners in portions of lateral recesses that are laterally spaced from backside trenches by a distance grater than a predefined lateral offset distance. Tungsten nucleates on the polycrystalline aluminum oxide liners prior to nucleating on a metallic liner layer. Thus, tungsten layers can be deposited from the center portion of each backside recess, and the growth of tungsten can proceed toward the backside trenches. By forming the tungsten layers without voids, structural integrity of the three-dimensional memory device can be enhanced.
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