Three-dimensional non-volatile memory and manufacturing method thereof
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United States of America Patent
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Jan 15, 2019
Grant Date -
Jan 18, 2018
app pub date -
Oct 14, 2016
filing date -
Jul 12, 2016
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Abstract
A three-dimensional non-volatile memory including a substrate, a stacked structure and a channel layer. The stacked structure is disposed on the substrate and includes first dielectric layers, gates and charge storage structures. The first dielectric layers and the gates are alternately stacked. The charge storage structures are disposed at one side of the gates. Two adjacent charge storage structures are isolated by the first dielectric layer therebetween. Each of the charge storage structures includes a first oxide layer, a nitride layer and a second oxide layer sequentially disposed at one side of each of the gates. The channel layer is disposed on a sidewall of the stacked structure adjacent to the charge storage structures.
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