Fin-type field effect transistor structure and manufacturing method thereof
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United States of America Patent
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Jun 25, 2019
Grant Date -
Jan 18, 2018
app pub date -
Sep 18, 2017
filing date -
Dec 15, 2015
priority date (Note) -
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Abstract
A fin-type field effect transistor comprising a substrate, at least one gate structure, spacers and source and drain regions is described. The substrate has a plurality of fins and a plurality of insulators disposed between the fins. The source and drain regions are disposed on two opposite sides of the at least one gate structure. The gate structure is disposed over the plurality of fins and disposed on the plurality of insulators. The gate structure includes a stacked strip disposed on the substrate and a gate electrode stack disposed on the stacked strip. The spacers are disposed on opposite sidewalls of the gate structure, and the gate electrode stack contacts sidewalls of the opposite spacers.
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