Semiconductor device with metal layer along a step portion
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United States of America Patent
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Nov 5, 2019
Grant Date -
Jan 18, 2018
app pub date -
Aug 15, 2017
filing date -
Jul 10, 2014
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor layer including a wide bandgap semiconductor, the semiconductor layer having an element region and an outer peripheral region surrounding an outer periphery of the element region when viewed two-dimensionally, forming a step portion surrounding the outer periphery of the element region in the outer peripheral region, and forming a metal layer along the step portion. The step portion has a sidewall recessed downward from a main surface of the element region in a cross section parallel to a thickness direction of the semiconductor layer, and the metal layer extends to cover at least a portion of the sidewall. The method of manufacturing a semiconductor device further includes the step of dividing the semiconductor layer into the element regions on an outside of the step portion when viewed from the element region.
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