Electric fuse structure and method for fabricating the same

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United States of America Patent

PATENT NO 11056431
APP PUB NO 20180019206A1
SERIAL NO

15275479

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Abstract

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A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and first fuse branches and second fuse branches are formed in the substrate, in which the first fuse branches and the second fuse branches are separated by a shallow trench isolation (STI) and the second fuse branches include different sizes. Next, fuse elements are formed to connect the first fuse branches and the second fuse branches.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTDNO 88 LIANHUA AVENUE INTEGRATED CIRCUIT SCIENCE PARK JINJIANG CITY QUANZHOU CITY FUJIAN PROVINCE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagai, Yukihiro Saijo, JP 61 290

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