Electric fuse structure and method for fabricating the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 6, 2021
Grant Date -
Jan 18, 2018
app pub date -
Sep 26, 2016
filing date -
Jul 14, 2016
priority date (Note) -
In Force
status (Latency Note)
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Importance

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Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and first fuse branches and second fuse branches are formed in the substrate, in which the first fuse branches and the second fuse branches are separated by a shallow trench isolation (STI) and the second fuse branches include different sizes. Next, fuse elements are formed to connect the first fuse branches and the second fuse branches.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
UNITED MICROELECTRONICS CORP | NO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY | |
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD | NO 88 LIANHUA AVENUE INTEGRATED CIRCUIT SCIENCE PARK JINJIANG CITY QUANZHOU CITY FUJIAN PROVINCE |
International Classification(s)

- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Nagai, Yukihiro | Saijo, JP | 61 | 290 |
# of filed Patents : 61 Total Citations : 290 |
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- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 4 Age
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