Multi-level air gap formation in dual-damascene structure
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United States of America Patent
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Mar 5, 2019
Grant Date -
Jan 18, 2018
app pub date -
Aug 30, 2017
filing date -
Jul 12, 2016
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Abstract
An upper layer is formed in a first interlayer dielectric (ILD) layer. The upper layer comprises a plurality of metal interconnects and one or more upper layer air gaps positioned between adjacent metal interconnects. A lower layer is formed in the first ILD layer. The lower layer comprises one or more vias, and one or more lower air gaps positioned between adjacent vias. The upper layer and the lower layer are formed in accordance with a dual-damascene process.
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