SEMICONDUCTOR DEVICE HAVING REDISTRIBUTION LAYER WITH COPPER MIGRATION STOPPING
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Jul 7, 2017
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Jul 14, 2016
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A semiconductor device having a first dielectric layer and a redistribution layer. The redistribution layer has sidewalls and is formed on a passivation layer of the semiconductor device. The first dielectric layer covers the sidewalls of the redistribution layer. The first dielectric layer is insulative and has a physical property of stopping the migration of the redistribution layer.
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