Semiconductor module and power converter
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United States of America Patent
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Jul 28, 2020
Grant Date -
Jan 18, 2018
app pub date -
Mar 9, 2017
filing date -
Jul 12, 2016
priority date (Note) -
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Abstract
A semiconductor module includes an insulating substrate including an insulating layer, a first metal pattern formed on an upper surface of the insulating layer, and a second metal pattern formed on a lower surface of the insulating layer, a semiconductor chip that is formed of SiC and is fixed to the first metal pattern with a first metal joining member, and a heat sink that is fixed to the second metal pattern with a second metal joining member, wherein the semiconductor chip has a thickness that is equal to or larger than 0.25 mm and equal to or smaller than 0.35 mm, and the insulating layer has a thickness that is larger than the thickness of the semiconductor chip by a factor of 2.66 inclusive to 5 inclusive.
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