Self-aligned insulated film for high-k metal gate device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 20, 2019
Grant Date -
Jan 18, 2018
app pub date -
Sep 27, 2017
filing date -
Sep 2, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, and a metal gate structure over the semiconductor substrate and the gate dielectric. The metal gate structure includes a first metal material. The integrated circuit further includes a seal formed on sidewalls of the metal gate structure. The integrated circuit further includes a dielectric film on the metal gate structure, the dielectric film including a first metal oxynitride comprising the first metal material and directly on the metal gate structure without extending over the seal formed on sidewalls of the metal gate structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully