Method of forming a P-type ohmic contact in group-III nitride semiconductors

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United States of America Patent

PATENT NO 9947537
SERIAL NO

15609040

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There is a problem that even if impurities are made to thermally diffuse in a temperature range of 700° C.-1150° C., a good ohmic contact cannot be formed in a p-type group-III nitride semiconductor layer.

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FUJI ELECTRIC CO LTDKAWASAKI COUNTY OF KANAGAWA CITY JAPAN KAWASAKI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsuyama, Hideaki Hino, JP 11 863

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