Method of manufacturing semiconductor device
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United States of America Patent
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Aug 6, 2019
Grant Date -
Jan 18, 2018
app pub date -
Jul 17, 2017
filing date -
Jul 18, 2016
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Abstract
A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.
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