PRODUCTION OF A SEMICONDUCTOR SUPPORT BASED ON GROUP III NITRIDES
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Jan 21, 2016
filing date -
Jan 21, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
The invention relates to a method for producing a support for the production of a semiconductor structure based on group III nitrides, characterised in that the method comprises the steps of:
- formation (100) of a buffer layer (20) on a substrate (10), said buffer layer comprising an upper surface layer based on group III nitrides,and deposition (200) of a crystalline layer (30) on the buffer layer, said crystalline layer being deposited from silicon atoms so as to cover the entire surface of the upper layer based on group III nitrides.
Loading the Abstract Image...
OK
First Claim
Family
Loading Family data...
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully