Methods for high growth rate deposition for forming different cells on a wafer
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United States of America Patent
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Jul 19, 2022
Grant Date -
Jan 18, 2018
app pub date -
Sep 27, 2017
filing date -
Oct 14, 2009
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Abstract
Aspects of the disclosure relate to processes for epitaxial growth of Group III/V materials at high rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, about 70 μm/hr, about 80 μm/hr, and about 90-120 μm/hr deposition rates. The Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.
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