Method for depositing a silicon nitride film
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United States of America Patent
Stats
-
Jul 17, 2018
Grant Date -
Jan 18, 2018
app pub date -
Jun 29, 2017
filing date -
Jul 13, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for depositing a silicon nitride film is provided. A nitrided adsorption site is formed in a recess formed in a surface of a substrate by supplying an ammonia-containing gas to the substrate for nitriding the surface of the substrate including the recess. A non-adsorption site is formed in a predetermined upper area of the recess by adsorbing a chlorine-containing gas on the nitride adsorption site in the predetermined upper area by physical adsorption. The predetermined upper area ranges from an upper end of the recess to a predetermined depth of the recess. A silicon-containing gas is adsorbed on the nitride adsorption site other than the predetermined upper area so as to deposit a silicon nitride film by a chemical reaction between the adsorbed ammonia-containing gas and the adsorbed silicon-containing gas. The nitride adsorption site includes a bottom surface of the recess.
First Claim
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International Classification(s)
- 2017 Application Filing Year
- C23C Class
- 3339 Applications Filed
- 2148 Patents Issued To-Date
- 64.34 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 5 Citation Count
- C23C Class
- 32.86 % this patent is cited more than
- 7 Age
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