Mask pattern forming method, fine pattern forming method, and film deposition apparatus
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United States of America Patent
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Nov 27, 2018
Grant Date -
Jan 18, 2018
app pub date -
Sep 25, 2017
filing date -
Sep 29, 2008
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Abstract
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
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