Magnetic memory device and method for operating the same
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United States of America Patent
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Oct 23, 2018
Grant Date -
Jan 18, 2018
app pub date -
Jul 11, 2017
filing date -
Jul 12, 2016
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Abstract
A magnetic memory device is provided. The magnetic memory device includes a memory circuit comprising a first tunnel magnetoresistive element and a second tunnel magnetoresistive element coupled in series. An input node of the magnetic memory device is coupled to the first tunnel magnetoresistive element, wherein the input node is configured to receive a voltage signal. The first tunnel magnetoresistive element initially holds a first resistance value, wherein the first tunnel magnetoresistive element is short-circuited to hold a second resistance value after the voltage signal is received by the input node. End nodes of the memory circuit are coupled to defined voltages in a read mode. The magnetic memory device further includes a read-out circuit configured to measure a voltage at a sensing node in the read mode. The sensing node is interconnected between the first tunnel magnetoresistive element and the second tunnel magnetoresistive element.
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