Magnetic memory device and method for operating the same

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United States of America Patent

PATENT NO 10109367
APP PUB NO 20180019019A1
SERIAL NO

15646306

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Abstract

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A magnetic memory device is provided. The magnetic memory device includes a memory circuit comprising a first tunnel magnetoresistive element and a second tunnel magnetoresistive element coupled in series. An input node of the magnetic memory device is coupled to the first tunnel magnetoresistive element, wherein the input node is configured to receive a voltage signal. The first tunnel magnetoresistive element initially holds a first resistance value, wherein the first tunnel magnetoresistive element is short-circuited to hold a second resistance value after the voltage signal is received by the input node. End nodes of the memory circuit are coupled to defined voltages in a read mode. The magnetic memory device further includes a read-out circuit configured to measure a voltage at a sensing node in the read mode. The sensing node is interconnected between the first tunnel magnetoresistive element and the second tunnel magnetoresistive element.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AG85579 NEUBIBERG

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  • 2017 Application Filing Year
  • H01L Class
  • 30754 Applications Filed
  • 25260 Patents Issued To-Date
  • 82.14 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Raberg, Wolfgang Sauerlach, DE 77 637

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  • 9 Citation Count
  • H01L Class
  • 23.71 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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