Semiconductor memory device

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United States of America Patent

PATENT NO 10120741
APP PUB NO 20180018211A1
SERIAL NO

15710803

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Abstract

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The present invention provides a semiconductor memory device that can perform failure detection of an address decoder by a simple method with a low area overhead. The semiconductor memory device includes: a first memory array having a plurality of first memory cells arrange in matrix; a plurality of word lines provided corresponding to each of the memory cell rows; an address decoder for selecting a word line from the word lines based on the input address information; a second memory array that is provided adjacent to the first memory array in the column direction, having a plurality of second memory cells able to read address information used in the selection of the previously stored word line, according to the selection of the word line extended to the second memory array; and a comparison circuit for comparing the input address information with the address information read from the second memory array.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATIONTOKYO JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishii, Yuichiro Tokyo, JP 59 364
Miyanishi, Atsushi Tokyo, JP 30 463
Saito, Yoshikazu Tokyo, JP 82 730

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