MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND OPERATION METHOD OF THE MEMORY SYSTEM

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United States of America Patent

SERIAL NO

15499490

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Abstract

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A memory system includes: a first memory device including a first internal voltage generation circuit; and a second memory device including a second internal voltage generation circuit, wherein the first memory device and the second memory device receive an identical chip enable signal, and when the chip enable signal is disabled, the first internal voltage generation circuit a no the second internal voltage generation circuit are controlled in a standby mode, and when the chip enable signal is enabled, the first internal voltage generation circuit and the second internal voltage generation circuit are independently controlled to have one mode between a weak active mode and a strong active mode.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INC2091 GYEONGCHUNG-DAERO BUBAL-EUP GYEONGGI-DO ICHEON WA 17336

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HA, Chang-Wan San Jose, US 3 4
SONG, Sang-Hyun Gyeonggi-do, KR 3 51

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