Apparatus and a method of forming a particle shield
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 13, 2018
Grant Date -
Jan 18, 2018
app pub date -
Sep 28, 2017
filing date -
Jun 17, 2016
priority date (Note) -
In Force
status (Latency Note)
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Abstract
An apparatus for generating at least one particle shield in photolithography includes a first component and a second component. The first component and the second component are operable to form a first particle shield of the at least one particle shield for blocking particles from contacting a proximate surface of an object. The first component includes a first gas injector, and the second component includes a first gas extractor corresponding to the first gas injector. The first gas injector is configured to blow out a gas, thereby forming the first particle shield. The first gas extractor is configured to work with the first gas injector for providing gas pressure gradient for the first particle shield.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD | 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78 |
International Classification(s)

- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chen, Ching-Yueh | Hsinchu, TW | 14 | 15 |
# of filed Patents : 14 Total Citations : 15 | |||
Cheng, Wen-Hao | Hsinchu, TW | 102 | 272 |
# of filed Patents : 102 Total Citations : 272 | |||
Yoo, Chue San | Hsinchu, TW | 22 | 92 |
# of filed Patents : 22 Total Citations : 92 |
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Patent Citation Ranking
- 3 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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