Dynamic logic memcap
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 25, 2018
Grant Date -
Jan 18, 2018
app pub date -
Apr 27, 2015
filing date -
Apr 27, 2015
priority date (Note) -
In Force
status (Latency Note)
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Abstract
An integrated circuit may include a substrate with a plurality of transistors formed in the substrate. The plurality of transistors may be coupled to a first metal layer formed over the plurality of transistors. A plurality of high dielectric nanometer capacitors may be formed of memristor switch material between the first metal layer and a second metal layer formed over the plurality of high dielectric capacitors. The plurality of high dielectric capacitors may operate as memory storage cells in dynamic logic.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
HEWLETT-PACKARD DEVELOPMENT COMPANY L P | 11445 COMPAQ CENTER DRIVE WEST HOUSTON TX 77070 |
International Classification(s)

- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ge, Ning | Palo Alto, US | 259 | 734 |
# of filed Patents : 259 Total Citations : 734 | |||
Li, Zhiyong | Palo Alto, US | 291 | 2632 |
# of filed Patents : 291 Total Citations : 2632 | |||
Williams, R Stanley | Portola Valley, US | 277 | 6034 |
# of filed Patents : 277 Total Citations : 6034 | |||
Yang, Jianhua | Amherst, US | 183 | 2146 |
# of filed Patents : 183 Total Citations : 2146 |
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Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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