Method for determining a deterioration of power semiconductor modules as well as a device and circuit arrangement
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United States of America Patent
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Jan 1, 2019
Grant Date -
Jan 18, 2018
app pub date -
Dec 18, 2015
filing date -
Feb 3, 2015
priority date (Note) -
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Abstract
The present disclosure relates to power semiconductor modules. The teachings thereof may be embodied in modules with a power semiconductor component and methods, as well as a circuit arrangement. For example, a method may include: developing a thermal model of the power semiconductor module at a reference time point; establishing a reference temperature based on the thermal model; measuring a temperature-sensitive electrical parameter of the power semiconductor module during operation of the power semiconductor module; determining a current temperature from the measured temperature-sensitive electrical parameter of the power semiconductor module; calculating a temperature difference between the current temperature and the reference temperature; and determining a deterioration of the power semiconductor module based on the calculated temperature difference.
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