Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels
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United States of America Patent
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Jan 1, 2019
Grant Date -
Jan 18, 2018
app pub date -
Jul 15, 2016
filing date -
Jul 15, 2016
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Abstract
A method for forming a nanogap includes forming a knockoff feature on a dielectric layer and forming a trench in the dielectric layer on opposite sides of the knockoff feature. A noble metal is deposited in the trenches and over the knockoff feature. A top surface is polished to level the noble metal in the trenches with a top of the dielectric layer to form electrodes in the trenches and to remove the noble metal from the knockoff feature. A nanochannel is etched into the dielectric layer such that the knockoff feature is positioned within the nanochannel. The knockoff feature is removed to form a nanogap between the electrodes.
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