Semimetal compound of Pt and method for making the same
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United States of America Patent
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Nov 20, 2018
Grant Date -
Jan 18, 2018
app pub date -
Jul 6, 2017
filing date -
Jul 13, 2016
priority date (Note) -
In Force
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Abstract
The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtTe2. The method comprises: providing a PtTe2 polycrystalline material; placing the PtTe2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a temperature from 1200 degree Celsius to 1000 degree Celsius and a second end opposite to the first end and in a temperature from 1000 degree Celsius to 900 degree Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

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Patent Owner(s)
Patent Owner | Address | |
---|---|---|
HON HAI PRECISION INDUSTRY CO LTD | NO 66 JHONGSHAN RD TUCHENG DIST NEW TAIPEI CITY 236038 | |
TSINGHUA UNIVERSITY | 100084 NO 1 TSINGHUA YUAN BEIJING HAIDIAN DISTRICT BEIJING CITY BEIJING CITY 100084 |
International Classification(s)

- [Classification Symbol]
- [Patents Count]
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Fan, Shou-Shan | Beijing, CN | 1514 | 11778 |
Wu, Yang | Beijing, CN | 169 | 708 |
Yan, Ming-Zhe | Beijing, CN | 6 | 4 |
Zhang, Ke-Nan | Beijing, CN | 6 | 4 |
Zhou, Shu-Yun | Beijing, CN | 10 | 7 |
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