SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
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United States of America Patent
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Dec 15, 2020
Grant Date -
Jan 18, 2018
app pub date -
Feb 16, 2016
filing date -
Mar 3, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
A SiC epitaxial wafer having a SiC epitaxial layer formed on a SiC single crystal substrate having an offset angle of 4 degrees or less in a<11-20>direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.
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