METHOD FOR PRODUCING CRYSTAL

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United States of America Patent

SERIAL NO

15554819

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Abstract

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A method for producing a crystal of silicon carbide includes a preparation step, a contact step, a start step, a first growth step, a cooling step, and a second growth step.

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Patent Owner(s)

Patent OwnerAddress
KYOCERA CORPORATIONKYOTO-SHI KYOTO 612-8501

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
DOMOTO, Chiaki Soraku-gun, JP 14 37
KUBA, Yutaka Soraku-gun, JP 14 128
MASAKI, Katsuaki Kyoto-shi, JP 27 53

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