Method for making a semimetal compound of Pt by reacting elements Pt and Te
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United States of America Patent
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Nov 27, 2018
Grant Date -
Jan 18, 2018
app pub date -
Jul 6, 2017
filing date -
Jul 13, 2016
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Abstract
The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtTe2. The method comprises: placing pure Pt and pure Te in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature from 600 degree Celsius to 800 degree Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature from 400 degree Celsius to 500 degree Celsius and keeping for 24 hours to 100 hours at a cooling rate from 1 degree Celsius per hour to 10 degree Celsius per hour to obtain a crystal material of PtTe2; and separating the excessive reacting materials from the crystal material of PtTe2.
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