Indium-based quantum dots and production methods thereof

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United States of America Patent

PATENT NO 10717927
APP PUB NO 20180016495A1
SERIAL NO

15210171

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Abstract

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An indium-containing quantum dot including a compound represented by Chemical Formula 1:

description='In-line Formulae' end='lead'In1-xMxA   Chemical Formula 1description='In-line Formulae' end='tail'

    wherein, in Chemical Formula 1, M is aluminum, gallium, yttrium, or scandium, A is nitrogen, phosphorous, arsenic, antimony, bismuth, or a combination thereof, and X is greater than or equal to 0 and less than 1,wherein the indium-containing quantum dot includes fluorine and oxygen to bonded to a surface of the indium-containing quantum dot,wherein an amount of the fluorine is greater than or equal to about 10 atomic percent based on a total number of indium atoms in the indium-containing quantum dot as determined by Rutherford backscattering analysis, andwherein an amount of the oxygen is about 5 atomic percent to about 50 atomic percent based on the total number of indium atoms included in the quantum dot as determined by Rutherford backscattering analysis.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO
UNIVERSITY OF CALIFORNIA BERKELEYHILDEBRAND D83 UC BERKELEY CHEMISTRY DEPARTMENT #1460 BERKELEY CA 94720-1460

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Alivisatos, Paul Berkeley, US 19 1788
Bekenstein, Yehonadav Berkeley, US 5 12
Jang, Eun Joo Suwon-si, KR 367 3523
Kim, Tae Gon Hwaseong-si, KR 151 604

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