Composition for chemical mechanical polishing and method for reducing chemical mechanical polishing surface defects

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United States of America Patent

PATENT NO 10066127
APP PUB NO 20180016467A1
SERIAL NO

15210058

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Abstract

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The present disclosure provides chemical mechanical polishing (CMP) slurry, including an abrasive, a chelator, an oxidizing agent, and a surface modificator. The surface modificator is configured to modify a surface from hydrophobic to hydrophilic. The present disclosure also provides a method for reducing chemical mechanical polishing (CMP) surface defects. The method includes adding an additive into CMP slurry by at least 0.0001 wt %, wherein the additive modifies a surface to be polished from hydrophobic to hydrophilic.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD VI HSINCHU SCIENCE PARK HSINCHU 300

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  • 2016 Application Filing Year
  • C09K Class
  • 3076 Applications Filed
  • 2094 Patents Issued To-Date
  • 68.08 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yang, Chi-Ming Hsinchu, TW 184 1930
Yu, An-Dih New Taipei, TW 3 1

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges2915334913552101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 700255075100125150175200225250275300325350375400425450475500525550575

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