Titanium-ruthenium co-doped vanadium dioxide thermosensitive film material and preparation method thereof

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15719129

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A titanium-ruthenium co-doped vanadium dioxide thermosensitive film material and a preparation method thereof are provided, which relate to a technical field of uncooled infrared detectors and electronic films. The vanadium dioxide thermosensitive film material is prepared by using titanium and ruthenium as co-dopants, including a substrate and a titanium-ruthenium co-doped vanadium dioxide layer, wherein in the titanium-ruthenium co-doped vanadium dioxide layer, atomic percentages of the titanium, the ruthenium and the vanadium are respectively 4.0-7.0%, 0.5-1.5% and 25.0-30.0%, and a balance is the oxygen. The present invention also provides a preparation method of a titanium-ruthenium co-doped vanadium dioxide thermosensitive film material, including a step of using a titanium-ruthenium-vanadium alloy target as a source material and using a reactive sputtering method, or using a titanium target, a ruthenium target and a vanadium target as sputtering sources and using a co-reactive sputtering method.

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UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINANot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gu, Deen Chengdu, CN 7 7
Jiang, Yadong Chengdu, CN 34 77
Xu, Shiyang Chengdu, CN 4 2

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