Negative Electrode Active Material for Electric Device and Electric Device Using the Same
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Dec 17, 2014
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Dec 17, 2014
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A negative electrode active material including a silicon-containing alloy having a predetermined composition is used in an electric device. A ratio value (B/A) of a diffraction peak intensity B of a (001) plane of Sn to a diffraction peak intensity A of a (111) plane of Si is 0.3 or more and 3.7 or less in an X-ray diffraction measurement of the silicon-containing alloy using a CuKα1 ray. Here, the diffraction peak of the (111) plane of Si is present in a range of 2θ=24 to 33° and the diffraction peak of the (001) plane of Sn is present in a range of 2θ=26 to 35°.
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