Method for forming a hard mask pattern and method for manufacturing a semiconductor device using the same
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United States of America Patent
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Oct 16, 2018
Grant Date -
Jan 11, 2018
app pub date -
Sep 14, 2017
filing date -
Aug 6, 2015
priority date (Note) -
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Abstract
The inventive concepts provide a method for forming a hard mask pattern. The method includes forming a hard mask layer on an etch target layer disposed on a substrate, forming a photoresist pattern having an opening exposing one region of the hard mask layer, performing an oxygen ion implantation process on the one region using the photoresist pattern as a mask to form an oxidized portion in the one region, and patterning the hard mask layer using the oxidized portion as an etch mask.
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