METAL CHALCOGENIDE DEVICE AND PRODUCTION METHOD THEREFOR

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United States of America Patent

SERIAL NO

15544170

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Abstract

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The present invention relates to a chalcogenide device and particularly to a metal chalcogenide device using transition metal chalcogenides as electrodes and a production method therefor. The metal chalcogenide device according to the present invention may comprise: a substrate; an oxide layer positioned on the substrate; a first conductive metal chalcogenide layer positioned on the oxide layer; and first and second electrodes, which are positioned apart from one another on the metal chalcogenide layer and comprise metal chalcogenides.

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Patent Owner(s)

Patent OwnerAddress
LG ELECTRONICS INCSEOUL SOUTH KEREAN SEOUL
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITYCORPORATE COLLABORATION CENTER SUNGKYUNKWAN UNIVERSITY 2066 SEOBU-RO JANGAN-GU GYEONGGI-DO SUWON-SI 16419

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BARK, Hunyoung Suwon-si, KR 5 4
CHOI, Minseok Seoul, KR 54 250
LEE, Changgu Suwon-si, KR 7 52
LEE, Jinhwan Suwon-si, KR 32 415

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