Schottky barrier diode and method of manufacturing the same
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United States of America Patent
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Feb 23, 2021
Grant Date -
Jan 11, 2018
app pub date -
Dec 9, 2016
filing date -
Jul 5, 2016
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Abstract
A Schottky barrier diode includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p+ type region and a p type region disposed on the n− type layer and separated from each other; an anode disposed on the n− type layer, the p+ type region, and the p type region; and a cathode disposed on a second surface of the n+ type silicon carbide substrate. The p type region is in plural, has a hexagonal shape on the plane, and is arranged in a matrix shape, and the n− type layer disposed between the p+ type region and the p type region has a hexagonal shape on the plane and encloses the p type region.
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