Semiconductor Devices and Methods for Forming Semiconductor Devices

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United States of America Patent

SERIAL NO

15642893

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Abstract

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A semiconductor device includes an anode doping region of a diode structure arranged in a semiconductor substrate. The anode doping region has a first conductivity type. The semiconductor device further includes a second conductivity type contact doping region having a second conductivity type. The second conductivity type contact doping region is arranged at a surface of the semiconductor substrate and surrounded in the semiconductor substrate by the anode doping region. The anode doping region includes a buried non-depletable portion. At least part of the buried non-depletable portion is located below the second conductivity type contact doping region in the semiconductor substrate.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AGGERMAN BERG LAURA IBIZA NAUMBURG SAXONY-ANHALT

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mauder, Anton Kolbermoor, DE 350 3377
Pfirsch, Frank Dieter Munich, DE 47 215
Schulze, Hans-Joachim Taufkirchen, DE 693 4306
Seng, Philipp Munich, DE 11 44
Willmeroth, Armin Friedberg, DE 138 1429

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