Semiconductor Devices and Methods for Forming Semiconductor Devices
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United States of America Patent
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app pub date -
Jul 6, 2017
filing date -
Jul 7, 2016
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A semiconductor device includes an anode doping region of a diode structure arranged in a semiconductor substrate. The anode doping region has a first conductivity type. The semiconductor device further includes a second conductivity type contact doping region having a second conductivity type. The second conductivity type contact doping region is arranged at a surface of the semiconductor substrate and surrounded in the semiconductor substrate by the anode doping region. The anode doping region includes a buried non-depletable portion. At least part of the buried non-depletable portion is located below the second conductivity type contact doping region in the semiconductor substrate.
First Claim
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