Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10109744
APP PUB NO 20180013011A1
SERIAL NO

15654024

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDKANAGAWA KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Higaki, Yoshinari Hiroshima, JP 29 313
Sakakura, Masayuki Kanagawa, JP 311 16119
Yamazaki, Shunpei Tokyo, JP 7526 239327

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