Semiconductor device

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United States of America Patent

PATENT NO 10374096
APP PUB NO 20180013006A1
SERIAL NO

15713077

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Abstract

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According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.

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JAPAN DISPLAY INCTOKYO JAPAN TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fuchi, Masayoshi Tokyo, JP 25 94
Ishida, Arichika Tokyo, JP 52 118
Ishikawa, Miyuki Tokyo, JP 30 592
Okada, Takashi Tokyo, JP 461 5155
Watakabe, Hajime Tokyo, JP 113 177

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