SEMICONDUCTOR DEVICE
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United States of America Patent
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Jul 6, 2017
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Jul 11, 2016
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A transistor including a metal oxide and having a high field-effect mobility is provided. A highly reliable display device including the transistor is provided. At least two or more layers of a metal oxide layer having a first bandgap and a metal oxide layer having a second bandgap are alternately stacked. A difference between the first bandgap and the second bandgap is preferably 0.3 eV or more, further preferably 0.4 eV or more. Carriers flow owing to an In oxide, an In-Zn oxide, or an In—Ti—Zn oxide having the second bandgap, i.e., a narrow bandgap. At that time, carriers overflow into an In—Ti—Ga—Zn oxide having the first bandgap, i.e., a wide bandgap, from the oxide having the second bandgap.
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