Apparatus and methods of forming fin structures with asymmetric profile
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United States of America Patent
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Mar 27, 2018
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N/A
app pub date -
Dec 24, 2014
filing date -
Dec 24, 2014
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Abstract
An embodiment includes a microelectronic device comprising: a substrate comprising a raised portion and a non-raised portion, wherein a dielectric material is disposed adjacent the raised portion, an epitaxial sub-fin structure disposed on the raised portion, wherein a bottom portion of the epitaxial sub-fin structure comprises an asymmetric profile, and an epitaxial fin device structure disposed on the sub-fin structure. Other embodiments are described herein.
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