SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
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United States of America Patent
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Issued Date -
Jan 11, 2018
app pub date -
Jun 2, 2017
filing date -
Jul 7, 2016
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Abstract
A semiconductor device includes a via and first and second transistors of the same channel type which are formed in a semiconductor substrate. The first and second transistors are located in a first lateral direction of the via and have their channel direction that matches the first lateral direction. A first stress relaxation region is formed in the semiconductor substrate between the via and the first transistor which is located closer to the via than the second transistor is. A second stress relaxation region smaller than the first stress relaxation region is formed in the semiconductor substrate between the first transistor and the second transistor which is located farther from the via than the first transistor is.
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