Semiconductor device and method of manufacturing the same
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United States of America Patent
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Jun 12, 2018
Issued Date -
Jan 11, 2018
app pub date -
Nov 10, 2016
filing date -
Jul 5, 2016
priority date (Note) -
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Abstract
A semiconductor device includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a first trench and a second trench formed in the n− type layer and separated from each other; an n+ type region disposed between a side surface of the first trench and the side surface of the second trench and disposed on the n− type layer; a gate insulating layer disposed inside the first trench; a source insulating layer disposed inside the second trench; a gate electrode disposed on the gate insulating layer; an oxide layer disposed on the gate electrode; a source electrode disposed on the oxide layer, the n+ type region, and the source insulating layer; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate.
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