FINFET having a gate structure in a trench feature in a bent fin
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United States of America Patent
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Jul 14, 2020
Grant Date -
Jan 11, 2018
app pub date -
Aug 16, 2017
filing date -
Nov 20, 2006
priority date (Note) -
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Abstract
A semiconductor device including semiconductor material having a bend and a trench feature formed at the bend, and a gate structure at least partially disposed in the trench feature. A method of fabricating a semiconductor structure including forming a semiconductor material with a trench feature over a layer, forming a gate structure at least partially in the trench feature, and bending the semiconductor material such that stress is induced in the semiconductor material in an inversion channel region of the gate structure.
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