Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same
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United States of America Patent
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Feb 26, 2019
Grant Date -
Jan 11, 2018
app pub date -
Aug 14, 2017
filing date -
Sep 1, 2008
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Abstract
A semiconductor device includes: a first base layer; a drain layer disposed on the back side surface of the first base layer; a second base layer formed on the surface of the first base layer; a source layer formed on the surface of the second base layer; a gate insulating film disposed on the surface of both the source layer and the second base layer; a gate electrode disposed on the gate insulating film; a column layer formed in the first base layer of the lower part of both the second base layer and the source layer by opposing the drain layer; a drain electrode disposed in the drain layer; and a source electrode disposed on both the source layer and the second base layer, wherein heavy particle irradiation is performed to the column layer to form a trap level locally.
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