Transistor structure
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United States of America Patent
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Jul 30, 2019
Grant Date -
Jan 11, 2018
app pub date -
Feb 8, 2017
filing date -
Jul 5, 2016
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Abstract
A transistor includes a quasi-intrinsic region of a first conductivity type that is covered with an insulated gate. The quasi-intrinsic region extends between two first doped regions of a second conductivity type. A main electrode is provided on each of the two first doped regions. A second doped region of a second conductivity type is position in contact with the quasi-intrinsic region, but is electrically and physically separated by a distance from the two first doped regions. A control electrode is provided on the second doped region.
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