Nitride semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 25, 2018
Grant Date -
Jan 11, 2018
app pub date -
Sep 5, 2017
filing date -
Apr 2, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A nitride semiconductor device includes a substrate; a nitride semiconductor layered structure disposed on the substrate and having a channel region; a first electrode and a second electrode both disposed on the nitride semiconductor layered structure; a first p-type nitride semiconductor layer disposed between the first electrode and the second electrode; and a first gate electrode disposed on the first p-type nitride semiconductor layer. The nitride semiconductor layered structure includes a first recess. The first p-type nitride semiconductor layer is at least partially disposed inside the first recess, and is separated from a side surface of the first recess.
First Claim
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International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
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