Nitride semiconductor device
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United States of America Patent
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Dec 25, 2018
Grant Date -
Jan 11, 2018
app pub date -
Sep 5, 2017
filing date -
Apr 2, 2015
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Abstract
A nitride semiconductor device includes a substrate; a nitride semiconductor layered structure disposed on the substrate and having a channel region; a first electrode and a second electrode both disposed on the nitride semiconductor layered structure; a first p-type nitride semiconductor layer disposed between the first electrode and the second electrode; and a first gate electrode disposed on the first p-type nitride semiconductor layer. The nitride semiconductor layered structure includes a first recess. The first p-type nitride semiconductor layer is at least partially disposed inside the first recess, and is separated from a side surface of the first recess.
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