Nitride semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Dec 25, 2018
Grant Date -
Jan 11, 2018
app pub date -
Sep 5, 2017
filing date -
Apr 2, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
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US Family Size
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Non-US Coverage
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Abstract
A nitride semiconductor device includes a substrate; a nitride semiconductor layered structure disposed on the substrate and having a channel region; a first electrode and a second electrode both disposed on the nitride semiconductor layered structure; a first p-type nitride semiconductor layer disposed between the first electrode and the second electrode; and a first gate electrode disposed on the first p-type nitride semiconductor layer. The nitride semiconductor layered structure includes a first recess. The first p-type nitride semiconductor layer is at least partially disposed inside the first recess, and is separated from a side surface of the first recess.
First Claim
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Family
| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| WO | A1 | WO2016157718 | Mar 02, 2016 |
| JP | B2 | JP6742301 | Mar 02, 2016 |
International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jun 25, 2026 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jun 25, 2030 |
