Trench-based power semiconductor devices with increased breakdown voltage characteristics

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United States of America Patent

PATENT NO 10868113
APP PUB NO 20180012958A1
SERIAL NO

15688833

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Abstract

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Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC5005 E MCDOWELL ROAD MAILDROP A700 PHOENIX AS 85008

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Challa, Ashok Sandy, US 48 2248
Kinzer, Daniel El Segundo, US 6 88
Probst, Dean E West Jordan, US 51 1537
Yedinak, Joseph A Mountain Top, US 63 2089

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