SILICON CARBIDE SEMICONDUCTOR DEVICE
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United States of America Patent
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Feb 8, 2016
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Mar 24, 2015
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Abstract
A silicon carbide semiconductor device has a silicon carbide substrate and an insulating film. The silicon carbide substrate includes a termination region having a peripheral edge, and an element region surrounded by the termination region. The insulating film is provided on the termination region. The termination region includes a first impurity region having a first conductivity type, and a field stop region having the first conductivity type, being in contact with the first impurity region and having a higher impurity concentration than the first impurity region. The field stop region is at least partially exposed at the peripheral edge.
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