3D phase change memory with high endurance
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United States of America Patent
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May 15, 2018
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app pub date -
Sep 13, 2017
filing date -
Jul 11, 2016
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Abstract
A plurality of memory cells in a 3D cross-point array with improved endurance is disclosed. Each memory cell, disposed between first and second conductors, includes a switch in series with a pillar of phase change material. The pillar has a Te-rich material at one end proximal to the second conductor, and an Sb-rich material at the other end proximal to the first conductor, wherein the current direction is from the first conductor to the second conductor.
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