3D phase change memory with high endurance
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United States of America Patent
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-
May 15, 2018
Issued Date -
N/A
app pub date -
Sep 13, 2017
filing date -
Jul 11, 2016
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A plurality of memory cells in a 3D cross-point array with improved endurance is disclosed. Each memory cell, disposed between first and second conductors, includes a switch in series with a pillar of phase change material. The pillar has a Te-rich material at one end proximal to the second conductor, and an Sb-rich material at the other end proximal to the first conductor, wherein the current direction is from the first conductor to the second conductor.
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International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Nov 15, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 15, 2029 |
