Semiconductor device
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United States of America Patent
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Aug 30, 2022
Grant Date -
Jan 11, 2018
app pub date -
Sep 7, 2017
filing date -
Nov 29, 2013
priority date (Note) -
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Abstract
A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).
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