Semiconductor device and method of manufacturing the same

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United States of America Patent

PATENT NO 10211221
APP PUB NO 20180012905A1
SERIAL NO

15711638

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Abstract

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Disclosed is a method of manufacturing a semiconductor device, including: forming a stacked structure including first material layers and second material layers alternately stacked on each other; forming a pillar passing through the stacked structure, the pillar including a protruding portion protruding above an uppermost surface of the stacked structure; forming a conductive layer surrounding the protruding portion of the pillar; and forming a conductive pattern in contact with the protruding portion of the pillar by oxidizing a surface of the conductive layer.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shin, Wan Cheul Gyeonggi-do, KR 12 40

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